Semiconductor substrate cleaning apparatus, method of cleaning semiconductor substrate and method of manufacturing semiconductor device

ABSTRACT

A semiconductor substrate cleaning apparatus, a method of cleaning a semiconductor substrate and a method of manufacturing a semiconductor device are obtained, in which reduction of production yield of a semiconductor device can be prevented. The semiconductor substrate cleaning apparatus includes a holding member holding a semiconductor substrate and a cleaning member allowing a cleaning medium to be supplied only to a part of a surface of the semiconductor substrate while the semiconductor substrate held by the holding member is fixed. In such a manner, the cleaning medium is supplied to the semiconductor substrate while the semiconductor substrate is not rotated but fixed, whereby only a part of the surface of the semiconductor substrate can be cleaned.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a semiconductor substratecleaning apparatus, a method of cleaning a semiconductor substrate and amethod of manufacturing a semiconductor device. More particularly, thepresent invention relates to a semiconductor substrate cleaningapparatus, a method of cleaning a semiconductor substrate, in which onlya particular position of the semiconductor substrate can be cleaned, anda method of manufacturing a semiconductor device.

[0003] 2. Description of the Background Art

[0004] Conventionally, a prescribed semiconductor device is formed byperforming film deposition, etching and the like on the surface of asemiconductor substrate in a manufacturing process of a semiconductordevice. Furthermore, before and after the steps of film deposition andetching, a cleaning step is performed for removing particles from thesurface of the semiconductor substrate.

[0005] An example of a cleaning method conventionally utilized in thecleaning step includes a method shown in FIG. 10. FIG. 10 is a schematicview illustrating one example of a conventional method of cleaning asemiconductor substrate. As shown in FIG. 10, in the conventional methodof cleaning a semiconductor substrate, a semiconductor substrate 101 isfixed on a base 102, and then base 102 and semiconductor substrate 101are rotated as represented by an arrow 130. Then, while semiconductorsubstrate 101 is rotated, cleaning liquid 105 is supplied from chemicalsnozzle 103 onto the surface of semiconductor substrate 101. At thispoint, by supplying cleaning liquid 105 to approximately the centerportion of semiconductor substrate 101, cleaning liquid 105 is flownfrom the center portion toward the outer periphery portion on thesurface of the semiconductor substrate, because the semiconductorsubstrate 101 is rotated. As a result, the entire surface ofsemiconductor substrate 101 can be cleaned almost uniformly.

[0006] Furthermore, another example of a cleaning method conventionallyutilized in the cleaning step includes a method as shown in FIG. 11.FIG. 11 is a schematic view illustrating another example of aconventional method of cleaning a semiconductor substrate. As shown inFIG. 11, in another example of a conventional method of cleaning asemiconductor substrate, a chemicals tank containing cleaning liquid 105is provided. Then, semiconductor substrate 101 is dipped in cleaningliquid 105 held in this chemicals tank 118, as represented by an arrow131. In this way also, the entire surface of semiconductor substrate 101can be cleaned almost uniformly.

[0007] Now, an identification label for individually identifyingsemiconductor substrate 101 is formed on the surface of semiconductorsubstrate 101 in a manufacturing process of a semiconductor device. Alaser-printed portion 106 is formed as this identification label byprinting the substrate with a prescribed character or sign using a laserbeam as shown, for example, in FIG. 11. More specifically, the surfacelayer of semiconductor substrate 101 is irradiated with a laser beam andthus partially removed to form a groove. The irradiation energy orirradiation position of the laser beam is controlled such that theplanar shape of this groove has a prescribed character or sign. As aresult, a prescribed character or sign can be formed in laser-printedportion 106. It is noted that such laser-printed portion 106 is formedat a position different from a chip-formed region 119 that will be asemiconductor device. For example, it is formed at the end portion ofsemiconductor substrate 101.

[0008] A character or sign formed in laser-printed portion 106 needs tobe recognized even after CMP (Chemical Mechanical Polishing) isperformed to planarize a surface of an interlayer insulating film or thelike in the subsequent process. Therefore, a groove that represents acharacter or the like formed in laser-printed portion 106, is formed tohave a depth sufficient to be recognized even after the CMP describedabove is performed.

[0009] In forming such laser-printed portion 106, particles resultingfrom the laser print step remain on the surface of semiconductorsubstrate 101 or within the groove formed at the time of the laser printstep. In order to remove such particles from the surface ofsemiconductor substrate 101, the cleaning step as described above hasconventionally been carried out.

[0010] Particles, however, often remain within the groove even after thecleaning step, because the groove representing the character or the likeof laser-printed portion 106 is formed relatively deep as describedabove. When particles remain in the groove in such a manner, theparticles remaining within the groove adheres on chip-formed portion 119or the like on the surface of semiconductor substrate 101, in asubsequent hydrofluoric acid treatment step. The presence of suchparticles may cause a short circuit of interconnection or a structuraldefect in the semiconductor device formed on the surface ofsemiconductor substrate 101. Therefore, it may possibly reduceproduction yield of the finished semiconductor device.

[0011] On the other hand, cleaning liquid or a cleaning technique with ahigh cleaning capability may be used to completely remove the particlesfrom the inside of the groove after forming the laser-printed portion.In the conventional cleaning method, however, the entire surface ofsemiconductor substrate 101 is cleaned. Therefore, when a cleaningmethod with a high cleaning capability is used, the cleaning step maycause a damage in the structure of chip-formed region 119. Accordingly,it has been difficult to use a cleaning method with such a high cleaningcapability that can completely remove the particles within the groove.

[0012] As described above, it has been conventionally difficult toprevent reduction in production yield of the semiconductor device, whichresults from the particles remaining in the groove of laser-printedportion 106.

SUMMARY OF THE INVENTION

[0013] An object of the present invention is to provide a semiconductorsubstrate cleaning apparatus, a method of cleaning a semiconductorsubstrate and a method of manufacturing a semiconductor device, in whichreduction in production yield of the semiconductor device can beprevented.

[0014] A semiconductor substrate cleaning apparatus in accordance with aone aspect of the present invention includes a holding member holding asemiconductor substrate and a cleaning member allowing a cleaning mediumto be supplied only to a part of the surface of the semiconductorsubstrate while the semiconductor substrate held by the holding memberis fixed.

[0015] Accordingly, the cleaning medium is supplied to the semiconductorsubstrate with the semiconductor substrate fixed without rotation, sothat only a part of the surface of the semiconductor substrate can becleaned. Therefore, when particles are present in a groove thatrepresents a character or the like formed in a laser-printed portion,only this laser-printed portion can be cleaned. Furthermore, by usingchemicals with a high cleaning capability as a cleaning medium, theparticles existing within the groove can be removed.

[0016] In addition, since the cleaning medium is supplied only to a partof the surface of the semiconductor substrate (a laser-printed portion),the possibility that the region other than the above part of the surfaceof the semiconductor substrate (for example, a chip-formed region) isdamaged by the cleaning medium, can be reduced. In other words, only apart of the surface of the semiconductor substrate, such as alaser-printed portion can surely be cleaned without damaging thechip-formed region of the semiconductor substrate. This can prevent theparticles from remaining in the groove positioned on a part of thesurface of the semiconductor substrate (for example a laser-printedpotion). Therefore, in a semiconductor device formed on the surface ofthe semiconductor substrate, a defect resulting from the cleaning stepcan be prevented and the possibility of a defect resulting from theparticles can be reduced. As a result, reduction of production yield ofthe semiconductor device can be prevented.

[0017] In the semiconductor substrate cleaning apparatus in accordancewith the one aspect above, the cleaning member may include at least oneselected from the group consisting of a member supplying anultrasonically vibrated cleaning medium and a member supplying apressurized cleaning medium, to the part of the surface of thesemiconductor substrate.

[0018] In this case, the cleaning capability in cleaning the part of thesurface of the semiconductor substrate can be improved. Therefore, thepossibility that the particles remain in the above part can effectivelybe reduced.

[0019] In the semiconductor substrate cleaning apparatus in accordancewith the one aspect above, the cleaning member may include a nozzle forsupplying the cleaning medium to the surface of the semiconductorsubstrate, and a position determining member determining a relativeposition of the nozzle to the surface of the semiconductor substratebased on coordinate data of that part on the surface of thesemiconductor substrate which is supplied with the cleaning medium.

[0020] In this case, a position of the nozzle relative to the part to becleaned can accurately be determined. Therefore, the cleaning medium canbe supplied only to a part of the surface of the semiconductor substrateat high accuracy. Accordingly, only a part of the surface of thesemiconductor substrate can surely be cleaned.

[0021] In the semiconductor substrate cleaning apparatus in accordancewith the one aspect above, the rinsing member may include a membersupplying a rinsing medium to the surface of the semiconductorsubstrate. The cleaning member may supply the cleaning medium only to apart of the surface of the semiconductor substrate while the rinsingmedium is supplied to the surface of the semiconductor substrate.

[0022] In this case, even if the cleaning medium scatters over theregion other than the part of the surface of the semiconductorsubstrate, the cleaning medium is immediately washed away by the rinsingmedium. Therefore, the possibility of a damage caused by the cleaningmedium in the region other than the part of the surface of thesemiconductor substrate can be reduced.

[0023] A method of cleaning a semiconductor substrate in accordance withanother aspect of the present invention includes the steps of providinga semiconductor substrate, and cleaning by supplying a cleaning mediumonly to a part of a surface of the semiconductor substrate whilesupplying a rinsing medium to the surface of the semiconductor substratewith the semiconductor substrate being fixed.

[0024] A method of cleaning a semiconductor substrate in accordance witha further aspect of the present invention includes the steps ofproviding a semiconductor substrate, cleaning by supplying a cleaningmedium only to a part of a surface of the semiconductor substrate whilefixing the semiconductor substrate, and supplying a rinsing medium tothe surface of the semiconductor substrate after the cleaning step.

[0025] In the method of cleaning a semiconductor substrate in accordancewith the another aspect above or the further aspect above of the presentinvention, the cleaning step may include at least one selected from thegroup consisting of the step of supplying an ultrasonically vibratedcleaning medium and the step of supplying a pressurized cleaning medium,to the part of the surface of the semiconductor substrate.

[0026] A method of cleaning a semiconductor substrate in accordance witha still further aspect of the present invention includes the steps ofproviding a semiconductor substrate, providing a medium tank containinga cleaning medium therein for cleaning the surface of the semiconductorsubstrate, and dipping only an end portion of the semiconductorsubstrate into the cleaning medium held in the medium tank.

[0027] In such a manner, only the end portion of the semiconductorsubstrate can be cleaned in a simple step as described above. Since asemiconductor substrate often has a laser-printed portion formed on itsend portion, only such a printed portion formed at the end portion cansurely be cleaned.

[0028] Furthermore, since the region other than the end portion of thesemiconductor substrate is not in contact with the cleaning liquid, thepossibility that the cleaning liquid damages the region other than theend portion can significantly be reduced.

[0029] A method of manufacturing a semiconductor device in accordancewith other aspect of the present invention uses the method of cleaning asemiconductor substrate in accordance with the another aspect above orfurther or still further aspects of the present invention.

[0030] Accordingly, particles can surely be removed from a part of thesurface of the semiconductor substrate such as a laser-printed portion,so that reduction of production yield of the semiconductor device, whichresults from such particles, can be prevented.

[0031] The foregoing and other objects, features, aspects and advantagesof the present invention will become more apparent from the followingdetailed description of the present invention when taken in conjunctionwith the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0032]FIG. 1 is a schematic view illustrating a first embodiment of acleaning apparatus in accordance with the present invention.

[0033]FIG. 2 is a block diagram illustrating a configuration of thecleaning apparatus shown in FIG. 1.

[0034]FIG. 3 is a flow chart illustrating a method of cleaning asemiconductor substrate using the cleaning apparatus shown in FIG. 1.

[0035]FIG. 4 is a flow chart illustrating the cleaning steps shown inFIG. 3 in more detail.

[0036]FIG. 5 is a flow chart illustrating a modification of the firstembodiment of the method of cleaning a semiconductor substrate inaccordance with the present invention.

[0037]FIG. 6 is a schematic view illustrating a second embodiment of thecleaning apparatus in accordance with the present invention.

[0038]FIG. 7 is a flow chart illustrating a cleaning method using thecleaning apparatus shown in FIG. 6.

[0039]FIG. 8 is a schematic view showing a third embodiment of thecleaning apparatus in accordance with the present invention.

[0040]FIG. 9 is a flow chart illustrating the method of cleaning asemiconductor substrate using the cleaning apparatus shown in FIG. 8.

[0041]FIG. 10 is a schematic view illustrating an example of aconventional method of cleaning a semiconductor substrate.

[0042]FIG. 11 is a schematic view illustrating another example of aconventional method of cleaning a semiconductor substrate.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0043] In the followings, embodiments of the present invention will bedescribed with reference to the figures. It is noted that the same orcorresponding parts will be denoted with the same reference numerals inthe figures and the description thereof will not be repeated.

First Embodiment

[0044] Referring to FIGS. 1 to 4, a first embodiment of a method ofcleaning a semiconductor substrate using a cleaning apparatus inaccordance with the present invention will be described.

[0045] As can be seen from FIG. 1, in the method of cleaning asemiconductor substrate in accordance with the present invention, only aparticular portion of a substrate 1, which is a semiconductor substrate,that is, a part of substrate 1, for example, a laser-printed portion 6is cleaned. A cleaning apparatus 10 as a semiconductor substratecleaning apparatus which performs such a cleaning method includes acontrol unit 11, a substrate operating unit 14, a chemicals nozzleoperating unit 12, and pure water nozzle operating unit 13, as shown inFIG. 2. Control unit 11 controls chemicals nozzle operating unit 12,pure water nozzle operating unit 13 and substrate operating unit 14.

[0046] Substrate operating unit 14 controls a manipulator (not shown)for mounting substrate 1 onto a base 2 as a holding member, a positionof base 2, and the like. Base 2 holds substrate 1 to be fixed withoutrotation. Chemicals nozzle operating unit 12 controls a position of achemicals nozzle 3 which sprays cleaning liquid 5 as a cleaning mediumonly to a particular part of substrate 1, as well as a dischargepressure, a discharge flow rate and the like of cleaning liquid 5 inchemicals nozzle 3. It is noted that chemicals nozzle 3 is connected toa pump and a chemicals tank (not shown) through a hose 4. Cleaningliquid 5 is discharged from chemicals nozzle 3 with substrate 1 fixedwithout rotation, as described later. Furthermore, pure water nozzleoperating unit 13 as a rinsing member controls the rinsing conditionssuch as a position of a pure water nozzle 7 which discharges pure water9 as a rinsing medium for washing cleaning liquid 5 away from thesurface of substrate 1, a discharge flow rate of pure water 9, and thelike. Note that pure water nozzle 7 is connected to a pump and a purewater tank (not shown) through a hose 8.

[0047] In this way, only laser-printed portion 6 that is a part of thesurface of substrate 1 can be cleaned, since cleaning liquid 5 issupplied to substrate 1 with substrate 1 fixed without rotation.Therefore, when particles exist within a groove representing a characteror the like formed in laser-printed portion 6, the particles existingwithin the groove can be removed by using chemicals with a high cleaningcapability as cleaning liquid 5.

[0048] Furthermore, since cleaning liquid 5 is supplied only tolaser-printed portion 6 that is the part of the surface of substrate 1,the possibility that the region other than laser-printed portion 6 ofthe surface of substrate 1 (for example a chip-formed region) is damagedby cleaning liquid 5 can be reduced. In other words, only laser-printedportion 6 can surely be cleaned without causing a damage in thechip-formed region or the like of substrate 1. Therefore, in thesemiconductor device formed on the surface of the semiconductorsubstrate, a defect resulting from the cleaning step can be prevented,and in addition the possibility of a defect resulting from the particlescan be reduced. As a result, reduction of production yield of thesemiconductor device can be prevented.

[0049] Furthermore, when chemicals for cleaning are used as cleaningliquid 5, the particles can surely be removed from laser-printed portion6 of substrate 1 by adjusting conditions such as a type or aconcentration of chemicals in accordance with the type of particles tobe removed from the surface of substrate 1.

[0050] Alternatively, pure water may be used as cleaning liquid 5, asdescribed later. When pure water is used as cleaning liquid 5, atechnique such as of spraying pure water onto substrate 1 at highpressure can be used to remove the particles from laser-printed portion6 of substrate 1. Furthermore, even if pure water as this cleaningmedium scatters over the surface region other than laser-printed portion6 of substrate 1, a damage resulting from the cleaning medium isscarcely caused in this region, because pure water is used as cleaningliquid 5.

[0051] Additionally, chemicals nozzle operating unit 12 as a cleaningmember may include an ultrasonic generator for applying an ultrasonicvibration to cleaning liquid 5 such that cleaning liquid 5 asultrasonically vibrated can be supplied to a part of the surface ofsubstrate 1. Alternatively, chemicals nozzle operating unit 12 may beconfigured to supply pressurized cleaning liquid 5 to substrate 1.

[0052] In this case, the cleaning capability in cleaning a part of thesurface of substrate 1 can be improved.

[0053] Furthermore, even if washing liquid 5 scatters and adheres ontothe surface region of substrate 1 other than laser-printed portion 6 tobe cleaned, that adhered cleaning liquid 5 can be washed away by purewater 9, as pure water nozzle 7 is installed. Therefore, the possibilitythat the region other than laser-printed portion 6 of substrate 1 (forexample a chip-formed region) is damaged by the scattered cleaningliquid 5 can be reduced.

[0054] In addition, in cleaning apparatus 10, chemicals nozzle operatingunit 12 is configured such that cleaning liquid 5 can be supplied tolaser-printed portion 6 while pure water 9 is supplied to substrate 1.Therefore, even if cleaning liquid 5 scatters over the region other thanlaser-printed portion 6 of the surface of substrate 1, that cleaningliquid 5 can immediately be washed away by pure water 9 as a rinsingmedium.

[0055] A method of cleaning a semiconductor substrate using the cleaningapparatus shown in FIGS. 1 and 2 will now be described. It is noted thata method of cleaning a semiconductor substrate described below isperformed as a step of a method of manufacturing a semiconductor device.

[0056] As shown in FIG. 3, a step of providing a substrate (S110) isfirst performed. In this substrate provision step (S110), substrate 1 tobe cleaned is arranged on the mounting surface of base 2 using amanipulator or the like. Substrate 1 is fixed on base 2 preferably bysuch a method as vacuum suction, electrostatic suction or the like.

[0057] A positioning step (S120) is then performed. In this positioningstep (S120), a relative position between substrate 1, chemicals nozzle 3and pure water nozzle 7 is determined. Chemicals nozzle 3 is arranged atsuch a position that allows cleaning liquid 5 to be sprayed ontolaser-printed portion 6 that is a region to be cleaned, of the surfaceof substrate 1. Furthermore, pure water nozzle 7 is arranged at such aposition that allows scattered cleaning liquid to be washed away fromthe surface of substrate 1 if cleaning liquid 5 which is sprayed ontolaser-printed portion 6 scatters therearound. Pure water nozzle 7 may bearranged, for example, approximately at the center of substrate 1, tosupply pure water 9 to the entire surface of substrate 1.

[0058] A cleaning step (S130) is then performed. Specifically, thiscleaning step (S130) includes the following steps. First, as shown inFIG. 4, a step of starting discharge of pure water from pure waternozzle 7 (S131) is performed in order to supply pure water 9 as arinsing medium to the surface of substrate 1 beforehand. Thereafter, astep of cleaning a particular part by discharging chemicals whileflowing pure water (S132) is performed. More specifically, cleaningliquid 5 of chemicals is discharged toward laser-printed portion 6 fromchemicals nozzle 3. At this point, substrate 1 is fixed and not rotated.

[0059] As a result, laser-printed portion 6 as a particular part can becleaned by directly spraying cleaning liquid 5.

[0060] Since cleaning liquid 5 is supplied only to a part of the surfaceof substrate 1 (laser-printed portion 6), the possibility that theregion other than laser-printed portion 6 of the surface of substrate 1(for example a chip-formed region) is damaged by cleaning liquid 5 canbe reduced.

[0061] Furthermore, even if cleaning liquid 5 scatters over the regionother than the part of the surface of substrate 1, that cleaning liquid5 is immediately washed away by pure water 9 as a rinsing medium.Therefore, the possibility of a damage caused by cleaning liquid 5 inthe region other than laser-printed portion 6 of substrate 1 can surelybe reduced.

[0062] As a result, only a part of the surface of substrate 1 such aslaser-printed portion 6 can surely be cleaned without causing a damagein the chip-formed region or the like of substrate 1. Accordingly, thepossibility that particles or the like remain in laser-printed portion 6can be reduced. Therefore, reduction of production yield of asemiconductor device, which results from such particles, can beprevented by applying the cleaning apparatus and method in accordancewith the present invention as described above in forming a semiconductordevice such as a semiconductor memory device on the surface of substrate1.

[0063] It is noted that in the cleaning step (S130) chemicals nozzle 3may appropriately be moved to correspond to the shape of laser-printedportion 6 or the shape of the character or sign forming theidentification label formed in the laser-printed portion. Furthermore,such a technique may be used for cleaning liquid 5 in that megasonicpure water (ultrasonically vibrated pure water) in place of chemicals issprayed to laser-printed portion 6, ultrasonically vibrated chemicalsare sprayed to laser-printed portion 6, and chemicals or pure water athigh pressure (pressurized) is sprayed to laser-printed portion 6.Application of such a technique can increase the cleaning capability ofcleaning liquid 5.

[0064] Additionally, the different cleaning techniques above may becombined for cleaning. Different cleaning methods may be performedsuccessively, for example, by first spraying chemicals to laser-printedportion 6, then spraying megasonic pure water, and thereafter furtherspraying pressurized pure water or chemicals (high pressure Jet).

[0065] Here, if chemicals for cleaning are used as cleaning liquid 5,particles can surely be removed from laser-printed portion 6 ofsubstrate 1 by adjusting conditions such as a type or concentration ofchemicals for cleaning in accordance with the type of substrate 1 to becleaned or particles to be removed, as previously mentioned.

[0066] On the other hand, in case pure water is used as cleaning liquid5, even if this pure water as cleaning liquid 5 scatters over a surfaceregion other than laser-printed portion 6 of substrate 1, a damage isscarcely caused by cleaning liquid 5 on this surface region.

[0067] Furthermore, in case pure water is used as the cleaning medium,the cleaning step may be performed without supplying pure water as arinsing medium from pure water nozzle 7 to the surface of substrate 1.

[0068] In the cleaning step (S130), such a method as shown in FIG. 5 mayalso be used instead of cleaning using cleaning liquid 5 of chemicalswith pure water 9 previously supplied to the surface of substrate 1.Referring to FIG. 5, a modification to the first embodiment of themethod of cleaning a semiconductor substrate in accordance with thepresent invention will be described.

[0069] As shown in FIG. 5, in the cleaning step (S130) (see FIG. 3), astep of discharging chemicals to clean a particular part (S133) is firstperformed. Specifically, cleaning liquid 5 of chemicals is dischargedfrom chemicals nozzle 3 only to laser-printed portion 6. Here, theentire region of laser-printed portion 6 may surely be cleaned by movingchemicals nozzle 3 as previously mentioned. At this point, substrate 1is not rotated but fixed.

[0070] A step of washing the entire surface of the substrate with purewater (S134) is then performed after completion of cleaning.Specifically, the surface of substrate 1 is washed with water bysupplying pure water 9 as a rinsing medium from pure water nozzle 7 tothe surface of substrate 1. As a result, cleaning liquid 5 remaining onthe surface of substrate 1 is washed away.

[0071] In this way also, the effect similar to the cleaning method shownin FIGS. 1 to 4 can result.

[0072] It is noted that in the cleaning step (S133) shown in FIG. 5,such a technique may be used in that megasonic pure water is sprayed tolaser-printed portion 6 in place of chemicals, ultrasonically vibratedchemicals are sprayed to laser-printed portion 6, or pressurizedchemicals or pure water is sprayed to laser-printed portion 6.Additionally, the different cleaning methods as described above may becombined for cleaning.

Second Embodiment

[0073] Referring to FIGS. 6 and 7, a second embodiment of the cleaningapparatus and a method of cleaning a semiconductor substrate using thecleaning apparatus in accordance with the present invention will bedescribed.

[0074] As shown in FIG. 6, the cleaning apparatus basically has aconfiguration similar to the first embodiment of the cleaning apparatusin accordance with the present invention, except for the configurationin chemicals nozzle operation unit 12 (see FIG. 2). More specifically,in the cleaning apparatus shown in FIG. 6, the chemicals nozzleoperating unit includes chemicals nozzle 3 and nozzle movementcontroller 16. Nozzle movement controller 16 is connected to chemicalsnozzle 3 through arm 15. As nozzle movement controller 16 moves,chemicals nozzle 3 can freely move within a plane substantially parallelto the surface of substrate 1 as represented by an arrow 17.

[0075] Furthermore, coordinate data of a region to be cleaned insubstrate 1 is transmitted through a conductive line from control unit11 to nozzle movement controller 16. Nozzle movement controller 16 canmove chemicals nozzle 3 based on the coordinate data. More specifically,it can move chemicals nozzle 3 onto laser-printed portion 6 to becleaned (see FIG. 1) based on the coordinate data. As a result, theposition of chemicals nozzle 3 can be determined accurately. Therefore,cleaning liquid 5 such as chemicals can be supplied only to the regionto be cleaned with high accuracy.

[0076] A method of cleaning a semiconductor substrate using the cleaningapparatus shown in FIG. 6 will now be described. The method of cleaninga semiconductor substrate using the cleaning apparatus shown in FIG. 6basically includes the step (shown in FIG. 3) similar to the firstembodiment of the method of cleaning a semiconductor substrate inaccordance with the present invention, but differs in the positioningstep (S120). Specifically, in the method of cleaning a semiconductorsubstrate using the cleaning apparatus shown in FIG. 6, a step ofacquiring coordinate data of a region to be cleaned within substrate 1(S121), as shown in FIG. 7, is performed in the positioning step (S120)after performing the step of providing a substrate (S110) shown in FIG.3. More specifically, coordinate data of laser-printed portion 6, thatis a region to be cleaned of the surface of substrate 1, for example, isinput into control unit 11, and that data is transmitted from controlunit 11 to nozzle movement controller 16.

[0077] A step of determining a relative position between the chemicalsnozzle and the substrate based on the above coordinate data (S122) isthen performed. Specifically, chemicals nozzle 3 is moved based on theinput coordinate data by operating nozzle movement controller 16.Chemicals nozzle 3 is then arranged on a region to be cleaned such aslaser-printed portion 6 that is indicated by that coordinate.

[0078] Thereafter, the cleaning step (S130) is performed in a mannersimilar to the cleaning method in accordance with the first embodimentof the present invention. Thus, only a particular region within thesurface of substrate 1 can be cleaned at high accuracy.

[0079] It is noted that in the step of determining a relative positionbetween the chemicals nozzle and the substrate based on coordinate data(S122), substrate 1 may be moved rather than moving chemicals nozzle 3.Specifically, base 2 having substrate 1 mounted thereon is configured tobe movable within a plane extending in a direction approximatelyparallel to the surface of substrate 1. For example, an XY stage movablewithin a plane approximately parallel to the surface of substrate 1 maybe used as base 2. Base 2 may then be moved such that the region to becleaned (laser-printed portion 6) is arranged under chemicals nozzle 3,based on the coordinate data of the region to be cleaned within thesubstrate. In this example, the coordinate data of a region to becleaned is transmitted to a controller which controls the operation ofbase 2 utilizing an XY stage or the like.

Third Embodiment

[0080] Referring to FIGS. 8 and 9, a third embodiment of the cleaningapparatus and a method of cleaning a semiconductor substrate using thecleaning apparatus in accordance with the present invention will bedescribed.

[0081] As shown in FIG. 8, the third embodiment of the cleaningapparatus in accordance with the present invention includes a chemicalstank 18 for holding chemicals 5, and a substrate holding portion (notshown) for holding and moving substrate 1 to dip substrate 1 intochemicals 5.

[0082] A method of cleaning a semiconductor substrate using the cleaningapparatus shown in FIG. 8 will now be described. A step of providingsubstrate 1 to be cleaned and a step of providing chemicals tank 18 as amedium tank containing cleaning liquid 5 of chemicals as a cleaningmedium are first performed. As shown in FIG. 9, a step of determiningthe position of the substrate (S210) is then performed. Specifically, asshown in FIG. 8, laser-printed portion 6 that is a region to be cleanedwithin substrate 1 is arranged to be lower. Substrate 1 is then arrangedabove chemicals tank 18.

[0083] A step of dipping only a portion of substrate 1 into chemicalstank 18 (S220) is then performed. Specifically, substrate 1 is moved ina direction represented by an arrow 20 in FIG. 8. At this point, thesubstrate holding portion which holds substrate 1 is moved to come closeto the side of chemicals tank 18. It is noted that chemicals tank 18 maybe moved upward in a direction represented by an arrow 21 with theposition of the substrate holding portion and substrate 1 being fixed.Then, as shown in FIG. 8, only laser-printed portion 6 arranged at theend portion of substrate 1 is dipped in chemicals 5 held in chemicalstank 18.

[0084] A step of keeping the substrate dipped in the chemicals for aprescribed period of time (S230) is then performed. The dipping time isdetermined depending on the characteristics or size of an object ofcleaning in the region to be cleaned such as laser-printed portion 6, orthe temperature or composition of chemicals 5.

[0085] A step of pulling the substrate out of chemicals layer (S240) isthen performed. Specifically, substrate 1 is pulled out of chemicalstank 18 in the direction represented by arrow 21 in FIG. 8. It is notedthat at this point chemicals tank 18 may be moved in the directionrepresented by arrow 20 with substrate 1 being fixed.

[0086] Thereafter, rinsing or washing with water for removing chemicalsremaining on the surface of substrate 1 is performed. In this way, onlya partial region in which laser-printed portion 6 of substrate 1 isformed can be cleaned. Furthermore, chip-formed portion 19 is not incontact with cleaning liquid 5 and therefore this chip-formed portion 19is not damaged by cleaning liquid 5.

[0087] Although the present invention has been described and illustratedin detail, it is clearly understood that the same is by way ofillustration and example only and is not to be taken by way oflimitation, the spirit and scope of the present invention being limitedonly by the terms of the appended claims.

What is claimed is:
 1. A semiconductor substrate cleaning apparatus,comprising: a holding member holding a semiconductor substrate; and acleaning member allowing a cleaning medium to be supplied only to a partof a surface of said semiconductor substrate while said semiconductorsubstrate held by said holding member is fixed.
 2. The semiconductorsubstrate cleaning apparatus according to claim 1, wherein said cleaningmedium includes at least one selected from the group consisting ofcleaning chemicals and pure water.
 3. The semiconductor substratecleaning apparatus according to claim 1, wherein said cleaning memberincludes at least one selected from the group consisting of means forsupplying ultrasonically vibrated said cleaning medium and means forsupplying pressurized said cleaning medium, to the part of the surfaceof said semiconductor substrate.
 4. The semiconductor substrate cleaningapparatus according to claim 1, wherein said cleaning member includes anozzle for supplying said cleaning medium to the surface of saidsemiconductor substrate, and position determining means for determininga relative position of said nozzle to the surface of said semiconductorsubstrate based on coordinate data of said part to be supplied with saidcleaning medium, of the surface of said semiconductor substrate.
 5. Thesemiconductor substrate cleaning apparatus according to claim 1, furthercomprising rinsing means for washing said cleaning medium away from thesurface of said semiconductor substrate.
 6. The semiconductor substratecleaning apparatus according to claim 5, wherein said rinsing meansincludes means for supplying a rinsing medium to the surface of saidsemiconductor substrate, and said cleaning member supplies said cleaningmedium only to the part of the surface of said semiconductor substratewhile the surface of said semiconductor substrate is supplied with therinsing medium.
 7. A method of cleaning a semiconductor substrate,comprising the steps of: providing a semiconductor substrate; andcleaning by supplying a cleaning medium only to a part of a surface ofsaid semiconductor substrate while supplying a rinsing medium to thesurface of said semiconductor substrate with said semiconductorsubstrate being fixed.
 8. The method of cleaning a semiconductorsubstrate according to claim 7, wherein said cleaning medium includes atleast one selected from the group consisting of cleaning chemicals andpure water.
 9. The method of cleaning a semiconductor substrateaccording to claim 7, wherein said step of cleaning includes at leastone selected from the group consisting of the step of supplyingultrasonically vibrated said cleaning medium and the step of supplyingpressurized said cleaning medium, to the part of the surface of saidsemiconductor substrate.
 10. A method of manufacturing a semiconductordevice using the method of cleaning a semiconductor substrate accordingto claim
 7. 11. A method of cleaning a semiconductor substrate,comprising the steps of: providing a semiconductor substrate; providinga medium tank holding a cleaning medium for cleaning a surface of thesemiconductor substrate; and dipping only an end portion of saidsemiconductor substrate into said cleaning medium held in said mediumtank.